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| FDG332PZ P-Channel PowerTrench(R) MOSFET July 2007 FDG332PZ P-Channel PowerTrench(R) MOSFET -20V, -2.6A, 97m Features Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m at VGS = -1.8V, ID = -1.9A Max rDS(on) = 330m at VGS = -1.5V, ID = -1.0A Very low level gate drive requirements allowing operation in 1.5V circuits Very small package outline SC70-6 RoHS Compliant tm General Description This P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench(R) process. It has been optimized for battery power management applications. Applications Battery management Load switch S D D D G D D SC70-6 Pin 1 G S D D D MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range -Continuous -Pulsed (Note 1a) (Note 1b) Ratings -20 8 -2.6 -9 0.75 0.48 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Single operation Thermal Resistance, Junction to Ambient Single operation (Note 1a) (Note 1b) 170 260 C/W Package Marking and Ordering Information Device Marking .32 Device FDG332PZ Package SC70-6 Reel Size 7'' Tape Width 8 mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 1 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 8V, VDS= 0V -20 -13 -1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -2.6A VGS = -2.5V, ID = -2.2A rDS(on) Static Drain to Source On Resistance VGS = -1.8V, ID = -1.9A VGS = -1.5V, ID = -1.0A VGS = -4.5V, ID = -2.6A , TJ = 125C gFS Forward Transconductance VDD = -5V, ID = -2.6A -0.4 -0.7 2.5 73 90 117 147 100 9 95 115 160 330 133 S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHZ 420 85 75 560 115 115 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = -4.5V, VDD = -10V, ID = -2.6A VDD = -10V, ID = -2.6A, VGS = -4.5V, RGEN = 6 5.2 4.8 59 28 7.6 0.9 1.9 10 10 95 45 10.8 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -0.6A IF = 2.6A, di/dt = 100A/s (Note 2) -0.7 28 8 -0.6 -1.2 45 13 A V ns nC Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 170C/W when mounted on a 1 in2 pad of 2 oz copper . b. 260C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 2 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 9 -ID, DRAIN CURRENT (A) VGS = -3V VGS = -2.5V VGS = -1.8V 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V VGS = -1.5V 2.0 VGS = -1.8V 6 1.5 VGS = -2.5V 3 VGS = -1.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -3V VGS = -4.5V 0 0.0 0.4 0.8 1.2 1.6 2.0 0.5 0 3 -ID, DRAIN CURRENT (A) 6 9 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 300 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -50 ID = -2.6A VGS = -4.5V ID = -2.6A 250 200 150 100 TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO TJ = 125oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 50 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature 9 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 4 VGS = 0V 1 TJ = 150oC 6 VDD = -5V 0.1 TJ = 25oC 3 TJ = 150oC TJ = 25oC 0.01 TJ = -55oC 0 0.0 TJ = -55oC 0.5 1.0 1.5 2.0 2.5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 3 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4.5 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -2.6A CAPACITANCE (pF) VDD = -5V 1000 Ciss 3.0 VDD = -10V VDD = -15V Coss 1.5 100 f = 1MHz VGS = 0V Crss 0.0 0 2 4 Qg, GATE CHARGE (nC) 6 8 30 0.1 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 -Ig, GATE LEAKAGE CURRENT(uA) 5 4 3 2 1 0 10 -ID, DRAIN CURRENT (A) 100us 10 10 10 10 10 10 10 10 10 VGS = 0V 1 THIS AREA IS LIMITED BY rDS(on) 1ms 10ms 100ms 1s 10s DC TJ = 150oC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 260oC/W TA = 25oC -1 -2 -3 -4 TJ = 25oC 0.01 0.1 1 10 50 0 5 10 15 20 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 100 VGS = -4.5V P(PK), PEAK TRANSIENT POWER (W) Figure 10. Gate Leakage Current vs Gate to Source Voltage 10 SINGLE PULSE RJA = 260 C/W TA = 25 C o o 1 0.1 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 4 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE RJA = 260 C/W o 0.01 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDG332PZ Rev.B 5 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourseSM Green FPSTM Green FPSTM e-SeriesTM GOTTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFEETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I29 (c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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